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RT1A050ZP
Data Sheet
100
10
V GS =0V
Pulsed
Ta=125°C
Ta=75°C
100
90
80
70
I D = -2.5A
Ta=25°C
Pulsed
10000
1000
t d (off)
t f
Ta=25°C
V DD = -6V
V GS =-4.5V
R G =10 ?
1
Ta=25°C
Ta=-25°C
60
50
I D = -5.0A
100
40
0.1
30
10
20
t r
t d (on)
0.01
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
0.01
0.1
1
10
5
SOURCE-DRAIN VOLTAGE : -V SD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
10000
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I D [A]
Fig.12 Switching Characteristics
4
Ciss
3
1000
2
Ta=25°C
Crss
V DD = -6V
100
Coss
1
0
I D = -5.0A
R G =10 ?
Pulsed
10
Ta=25°C
f=1MHz
V GS =0V
0
5
10
15
20
25
30
35
40
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
4/5
2009.01 - Rev.A
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